IRFS710A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Low RDS(ON) : 2.815 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
IDM VGS EAS IAR EAR dv/dt
TJ , TSTG
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
O2 O1 O1 O3
Total Power Dissipation (TC=25 ΟC ) Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
BVDSS = 400 V RDS(on) = 3.6 Ω ID = 1.6 A
TO-220F
2 3
1.Gate 2. Drain 3. Source
Value 400 1.6 1 6 +_ 30 117 1.6 2.3 4.0 23 0.19
- 55 to +150
Units V
A V m J A m J V/ns W W/ ΟC
ΟC
Thermal Resistance
Symbol
R θJC...
