Datasheet Summary
Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology
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BVDSS = 400 V RDS(on) = 1.0 Ω ID = 3.9 A
TO-220F
Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 Ω (Typ.)
1.Gate 2. Drain 3....
