Datasheet4U Logo Datasheet4U.com

IRFS730A - Advanced Power MOSFET

Key Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology www. DataSheet4U. com IRFS730A BVDSS = 400 V RDS(on) = 1.0 Ω ID = 3.9 A TO-220F Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 400V Lower RDS(ON) : 0.765 Ω (Typ. ) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Dra.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFS730A N-Channel MOSFET Transistor Inchange Semiconductor
IRFS730 N-Channel MOSFET LZG
IRFS730 N-CHANNEL MOSFET BLUE ROCKET ELECTRONICS
IRFS730B 400V N-Channel MOSFET Fairchild
IRFS710A N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFS710A Power MOSFET
IRFS740A Advanced Power MOSFET
IRFS240A Advanced Power MOSFET
IRFS244 Power MOSFET
IRFS244A Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com IRFS730A BVDSS = 400 V RDS(on) = 1.0 Ω ID = 3.9 A TO-220F Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3.