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IRFU014A - ADVANCED POWER MOSFET

Download the IRFU014A datasheet PDF. This datasheet also covers the IRFR014A variant, as both devices belong to the same advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
  • Lower RDS(ON): 0.097Ω (Typ. ) IRFR/U014A BVDSS = 60 V RDS(on) = 0.14Ω ID = 8.2 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR014A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFU110 N-Channel Power MOSFETs
IRFU120A Power MOSFET
IRFU130A Power MOSFET
IRFU210B 200V N-Channel MOSFET
IRFU214B 250V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.) IRFR/U014A BVDSS = 60 V RDS(on) = 0.14Ω ID = 8.2 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3.