IRFU120A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.)
IRFR/U120A
BVDSS = 100 V RDS(on) = 0.2 Ω ID = 8.4 A
D-PAK
2 1 3 1
I-PAK
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C )
- Ο Ο Ο
Value 100 8.4 5.3
1 O
Units V A A V m J A m J V/ns W W W/ C
Ο
34 + _ 20 141 8.4 3.2 6.5 2.5 32 0.26
- 55 to +150
O 1 O 1 O 3 O
Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for...
