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IRFU120A - Power MOSFET

Download the IRFU120A datasheet PDF. This datasheet also covers the IRFR120A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ. ) IRFR/U120A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 8.4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR120A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU120 POWER MOSFET International Rectifier
IRFU120 N-Channel Power MOSFETs Intersil Corporation
IRFU120 Power MOSFET Vishay Siliconix
IRFU120 N-Channel MOSFET INCHANGE
IRFU1205 Power MOSFET International Rectifier

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFU110 N-Channel Power MOSFETs
IRFU130A Power MOSFET
IRFU014A ADVANCED POWER MOSFET
IRFU210B 200V N-Channel MOSFET
IRFU214B 250V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) IRFR/U120A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 8.4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C ) * Ο Ο Ο Value 100 8.4 5.3 1 O Units V A A V mJ A mJ V/ns W W W/ C Ο 34 + _ 20 141 8.