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IRFU220A - Advanced Power MOSFET

Download the IRFU220A datasheet PDF. This datasheet also covers the IRFR220A variant, as both devices belong to the same advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ. ) IRFR/U220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR220A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU220 N-Channel Power MOSFETs Intersil Corporation
IRFU220 Power MOSFET Vishay Siliconix
IRFU220 Power MOSFET International Rectifier
IRFU220 N-Channel MOSFET INCHANGE
IRFU220B N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFU220B 200V N-Channel MOSFET
IRFU224B 250V N-Channel MOSFET
IRFU210B 200V N-Channel MOSFET
IRFU214B 250V N-Channel MOSFET
IRFU230A Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) IRFR/U220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3.