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IRFU310A - Power MOSFET

Download the IRFU310A datasheet PDF. This datasheet also covers the IRFR310A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 400V.
  • Low RDS(ON): 2.815Ω (Typ. ) IRFR/U310A BVDSS = 400 V RDS(on) = 3.6Ω ID = 1.7 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuo.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR310A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU310 Power MOSFET International Rectifier
IRFU310 Power MOSFET Vishay Siliconix
IRFU310 N-Channel MOSFET INCHANGE
IRFU320 Power MOSFET International Rectifier
IRFU320 N-Channel Power MOSFETs Intersil Corporation

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFU310B 400V N-Channel MOSFET
IRFU320 N-Channel Power MOSFETs
IRFU320B 400V N-Channel MOSFET
IRFU330B 400V N-Channel MOSFET
IRFU014A ADVANCED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.) IRFR/U310A BVDSS = 400 V RDS(on) = 3.6Ω ID = 1.7 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3.