IRFU310B Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. Features - - - - - - 1.7A, 400V, RDS(on) = 3.4Ω @VGS = 10 V Low gate charge ( typical 7.7 n C) Low Crss ( typical 6.0 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - ◀ ▲ - - G! G S D-PAK IRFR Series I-PAK IRFU Series ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRFR310B / IRFU310B 400 1.7 1.1 6.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) - Power Dissipation (TC = 25°C) 100 1.7 2.6 5.5 2.5 26 0.21 -55 to +150 300 TJ, Tstg TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient - Thermal Resistance, Junction-to-Ambient Typ ---Max 4.76 50 110 Units °C/W °C/W °C/W - When mounted on the minimum pad size remended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Rev. B, November...