IRFU320B Datasheet 400v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: IRFR320B / IRFU320B March 2001 IRFR320B / IRFU320B 400V N-Channel.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IRFU320B
Manufacturer	Fairchild (now onsemi)
File Size	672.47 KB
Description	400V N-Channel MOSFET
Datasheet	IRFU320B IRFR320B Datasheet (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Key Features

3.1A, 400V, RDS(on) = 1.75Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
◀ ▲.
G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuo.

IRFU320B Distributor

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