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IRFU330B - 400V N-Channel MOSFET

Download the IRFU330B datasheet PDF. This datasheet also covers the IRFR330B variant, as both devices belong to the same 400v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Key Features

  • 4.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G! G S D-PAK IRFR Series I-PAK G D S IRFU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (T.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR330B_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU3303 HEXFET Power MOSFET International Rectifier
IRFU3303PBF HEXFET Power MOSFET International Rectifier
IRFU330A Power MOSFET Samsung
IRFU310 Power MOSFET International Rectifier
IRFU310 Power MOSFET Vishay Siliconix

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFU310A Power MOSFET
IRFU310B 400V N-Channel MOSFET
IRFU320 N-Channel Power MOSFETs
IRFU320B 400V N-Channel MOSFET
IRFU014A ADVANCED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFR330B / IRFU330B November 2001 IRFR330B / IRFU330B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. Features • • • • • • 4.5A, 400V, RDS(on) = 1.