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IRFW614A - Power MOSFET

Download the IRFW614A datasheet PDF. This datasheet also covers the IRFI614A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
  • Lower RDS(ON): 1.393Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFI614A-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFW610A Power MOSFET Samsung
IRFW630A Power MOSFET Samsung
IRFW630B N-Channel MOSFET ON Semiconductor
IRFW450 N-Channel MOSFET Transistor Inchange Semiconductor
IRFW720A Power MOSFET Samsung

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFW614B N-Channel MOSFET
IRFW610B N-Channel MOSFET
IRFW620A Power MOSFET
IRFW620B N-Channel MOSFET
IRFW624A Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
$GYDQFHG 3RZHU 026)(7 IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 1.393Ω (Typ.