IRFW614A
Overview
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 250V
- Lower RDS(ON): 1.393Ω (Typ.)
- Part: IRFW614A
- Description: Power MOSFET
- Category: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 228.56 KB
Datasheets by Manufacturer
- IRFW610A — Samsung Semiconductor — Power MOSFET