IRFW634A
Overview
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 250V
- Lower RDS(ON): 0.327Ω(Typ.)
| Part | IRFW634A |
|---|---|
| Description | Power MOSFET |
| Category | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Size | 223.08 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRFW630B | onsemi | N-Channel MOSFET |
| IRFW630A | Samsung Semiconductor | Power MOSFET |