IRFW720B Overview
Key Specifications
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V
- Low gate charge ( typical 14 nC)
- Low Crss ( typical 11 pF)
- Fast switching
- 100% avalanche tested
