Datasheet4U.com

IRFW730S - Power MOSFET

Product Overview

Fairchild Semiconductor

📥 Download Datasheet

IRFW730S Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRFW730S

Datasheet Details

Part number	IRFW730S
Manufacturer	Fairchild Semiconductor
File Size	227.21 KB
Description	Power MOSFET
Datasheet	IRFW730S Datasheet
Additional preview pages of the IRFW730S datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 400V.
Lower RDS(ON): 0.765Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (.

📁 Similar Datasheet

IRFW730A - Power MOSFET (Samsung)
IRFW720A - Power MOSFET (Samsung)
IRFW450 - N-Channel MOSFET Transistor (Inchange Semiconductor)
IRFW610A - Power MOSFET (Samsung)
IRFW630A - Power MOSFET (Samsung)
IRFW630B - N-Channel MOSFET (ON Semiconductor)
IRFW830A - Power MOSFET (Samsung)
IRFWZ24A - Power MOSFET (Samsung)

Other Datasheets by Fairchild Semiconductor

IRFW730B - 400V N-Channel MOSFET
IRFW710A - Power MOSFET
IRFW710B - 400V N-Channel MOSFET
IRFW710S - Power MOSFET
IRFW720B - 400V N-Channel MOSFET
IRFW720S - Power MOSFET

Published: Aug 3, 2016 |