IRFW730S Datasheet | Fairchild Semiconductor

Key Features

• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Lower Input Capacitance
• Improved Gate Charge
• Extended Safe Operating Area
• Lower Leakage Current: 10µA (Max.) @ VDS = 400V
• Lower RDS(ON): 0.765Ω (Typ.)