IRL630A - Advanced Power MOSFET

Fairchild (now onsemi)

Key Features

Logic-Level Gate Drive.
Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
Lower RDS(ON): 0.335Ω (Typ. ) IRL630A BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Dra.

IRL630A advanced power mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	IRL630A
Manufacturer	Fairchild (now onsemi)
File Size	228.61 KB
Description	Advanced Power MOSFET
Datasheet	IRL630A Datasheet

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Other Datasheets by Fairchild (now onsemi)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) IRL630A BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3.