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IRL640S - Power MOSFET

Product Overview

Fairchild Semiconductor

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IRL640S Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRL640S

Datasheet Details

Part number	IRL640S
Manufacturer	Fairchild Semiconductor
File Size	227.01 KB
Description	Power MOSFET
Datasheet	IRL640S Datasheet
Additional preview pages of the IRL640S datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
150°C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
Lower RDS(ON): 0.145Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curre.

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Published: Aug 3, 2016 |