Datasheet4U Logo Datasheet4U.com

IRLI640A Datasheet Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: $GYDQFHG 3RZHU 026)(7 IRLW/I640A.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 150°C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
  • Lower RDS(ON): 0.145Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curre.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Vishay Logo IRLI640G ower MOSFET Vishay
International Rectifier Logo IRLI640G Power MOSFET International Rectifier
International Rectifier Logo IRLI640GPBF HEXFET Power MOSFET International Rectifier

More Datasheets from Fairchild (now onsemi)

Part Number Description
IRLI610A Advanced Power MOSFET
IRLI620A Power MOSFET
IRLI630A ADVANCED POWER MOSFET
IRLI510A ADVANCED POWER MOSFET
IRLI530A HEXFET Power MOSFET
IRLI540A Power MOSFET
IRL510 Power MOSFET
IRL520S Power MOSFET
IRL530 Power MOSFET
IRL540 Power MOSFET

IRLI640A Distributor