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IRLI640A - Power MOSFET

Download the IRLI640A datasheet PDF. This datasheet also covers the IRLW640A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 150°C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
  • Lower RDS(ON): 0.145Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curre.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLW640A-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLI640G ower MOSFET Vishay
IRLI640G Power MOSFET International Rectifier
IRLI640GPBF HEXFET Power MOSFET International Rectifier
IRLI620G Power MOSFET International Rectifier
IRLI620GPBF HEXFET Power MOSFET International Rectifier

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRLI610A Advanced Power MOSFET
IRLI620A Power MOSFET
IRLI630A ADVANCED POWER MOSFET
IRLI510A ADVANCED POWER MOSFET
IRLI530A HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
$GYDQFHG 3RZHU 026)(7 IRLW/I640A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.145Ω (Typ.