IRLI640A - Power MOSFET

This page provides the datasheet information for the IRLI640A, a member of the IRLW640A Power MOSFET family.

Product Overview

Fairchild Semiconductor

Part number	IRLI640A
Manufacturer	Fairchild Semiconductor
File Size	225.33 KB
Description	Power MOSFET
Datasheet	IRLI640A Datasheet
Additional preview pages of the IRLI640A datasheet.

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
150°C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
Lower RDS(ON): 0.145Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curre.

Other Datasheets by Fairchild Semiconductor

Published: Aug 4, 2016 |