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IRLW630A - ADVANCED POWER MOSFET

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Fairchild Semiconductor

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IRLW630A ADVANCED POWER MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRLW630A

Datasheet Details

Part number	IRLW630A
Manufacturer	Fairchild Semiconductor
File Size	225.02 KB
Description	ADVANCED POWER MOSFET
Datasheet	IRLW630A Datasheet
Additional preview pages of the IRLW630A datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
150° C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
Lower RDS(ON): 0.335Ω (Typ. ) IRLW/I630A BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Charact.

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Published: Apr 16, 2005 |