Datasheet Summary
April 2002
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and Features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
- Fast switching
- rDS(ON) = 0.0019Ω (Typ), VGS = 10V
- rDS(ON) = 0.0027Ω (Typ), VGS = 4.5V
- Qg (Typ) = 110nC, VGS = 5V
- Qgd (Typ) = 31nC
- CISS (Typ) = 11000pF
Applications
- DC/DC converters
DRAIN (FLANGE) D GATE SOURCE G S
TO-263AB MOSFET Maximum Ratings TA = 25°C...
