ISL9N302AS3ST - N-Channel Power MOSFET

Description

This device employs a new advanced trench MOSFET technology and

Features

low gate charge while maintaining low on-resistance. Optimized for switching.

Fairchild Semiconductor

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Datasheet Details

Part number	ISL9N302AS3ST
Manufacturer	Fairchild Semiconductor
File Size	253.25 KB
Description	N-Channel Power MOSFET
Datasheet	ISL9N302AS3ST Datasheet
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Full PDF Text Transcription

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ISL9N302AS3ST April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.0019Ω (Typ), VGS = 10V • rDS(ON) = 0.0027Ω (Typ), VGS = 4.

Published: Apr 5, 2005 |