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ISL9N312AP3/ISL9N312AS3ST
January 2002
ISL9N312AP3/ISL9N312AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.010Ω (Typ), VGS = 10V • rDS(ON) = 0.017Ω (Typ), VGS = 4.5V • Qg (Typ) = 13nC, VGS = 5V • Qgd (Typ) = 4.5nC • CISS (Typ) = 1450pF
Applications
• DC/DC converters
DRAIN (FLANGE)
SOURCE DRAIN GATE D
GATE SOURCE
G DRAIN (FLANGE) S
TO-263AB
Symbol VDSS VGS
TO-220AB
Ratings 30 ±20 58 32 12 Figure 4 75 0.
ISL9N312AS3ST Datasheet
