Datasheet Summary
ISL9N312AP3/ISL9N312AS3ST
January 2002
ISL9N312AP3/ISL9N312AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and Features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
- Fast switching
- rDS(ON) = 0.010Ω (Typ), VGS = 10V
- rDS(ON) = 0.017Ω (Typ), VGS = 4.5V
- Qg (Typ) = 13nC, VGS = 5V
- Qgd (Typ) = 4.5nC
- CISS (Typ) = 1450pF
Applications
- DC/DC converters
DRAIN (FLANGE)
SOURCE DRAIN GATE D
GATE SOURCE
G DRAIN...