ISL9R8120S3S Datasheet | Fairchild Semiconductor

Description The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49413. Features - Soft Recovery - - - - . . . . tb / ta > 5.5 - Fast Recovery - - - - - trr < 32ns - Operating Temperature - - - - 150o C - Reverse Voltage - - - - - . 1200V - Avalanche Energy Rated Applications - Switch Mode Power Supplies - Hard Switched PFC Boost Diode - UPS Free Wheeling Diode - Motor Drive FWD - SMPS FWD - Snubber Diode Package JEDEC TO-220AC ANODE CATHODE Symbol JEDEC TO-263AB K CATHODE (FLANGE) N/C A ANODE CATHODE (BOTTOM SIDE METAL) Device Maximum Ratings TC = 25°C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 105o C) Repetitive Peak Surge Current (20k Hz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40m H) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings...