ISL9V5045S3
ISL9V5045S3 is N-Channel IGBT manufactured by Fairchild Semiconductor.
- Part of the ISL9V5045S3S comparator family.
- Part of the ISL9V5045S3S comparator family.
Features
- SCIS Energy = 500m J at TJ = 25o C
- Logic Level Gate Drive
Applications
- Automotive Ignition Coil Driver Circuits
- Coil
- On Plug Applications
General Description
The ISL9V5045S3S and ISL9V5045S3 are next generation ignition IGBTs that offer outstanding SCIS capability in the industry standard D ²-Pak (TO-263) plastic packa ge. This device is int ended for use in automotive ignition circuits, specifically as a coil drivers. Internal diodes provide voltage clamping without the need for external ponents.
Eco SPARK® devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.
Package
GATE
COLLECTOR (FLANGE)
EMITTER
COLLECTOR (FLANGE)
JEDEC TO-263AB D2-Pak
Symbol
EMMITER COLLECTOR GATE
R1 GATE
R2
JEDEC TO-262AA
COLLECTOR EMITTER
1 ISL9V5045S3S / ISL9V5045S3 Rev. B
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ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol BVCER BVECS ESCIS25 ESCIS150
IC25 IC110 VGEM PD
TJ TSTG
TL Tpkg ESD
Parameter Collector to Emitter Breakdown Voltage (IC = 1 m A) Emitter to Collector Voltage
- Reverse Battery Condition (IC = 10 m A) At Starting TJ = 25°C, ISCIS = 39.2A, L = 650 µHy At Starting TJ = 150°C, ISCIS = 31.1A, L = 650 µHy Collector Current Continuous, At TC = 25°C, See Fig 9 Collector Current Continuous, At TC = 110°C, See Fig 9 Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at 100p F, 1500Ω
Ratings 480 24 500 315 51 43 ±10 300 2
-40 to 175 -40 to 175
300...