ISL9V5045S3ST Datasheet | Fairchild Semiconductor

Features - SCIS Energy = 500m J at TJ = 25o C - Logic Level Gate Drive - Qualified to AEC Q101 - Ro HS pliant Applications - Automotive Ignition Coil Driver Circuits - Coil - On Plug Applications General Description The ISL9V5045S3ST is next generation ignition IGBT that offer outstanding SCIS capability in the industry standard D2-Pak (TO-263) plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil drivers. Internal diodes provide voltage clamping without the need for external ponents. Eco SPARK® devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Package GATE EMITTER COLLECTOR (FLANGE) JEDEC TO-263AB D2-Pak Symbol GATE R1 R2 COLLECTOR EMITTER ISL9V5045S3ST Rev. A1 .fairchildsemi. ISL9V5045S3ST N-Channel Ignition IGBT Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 m A) Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 m A) At Starting TJ = 25°C, ISCIS = 39.2A, L = 650 µHy At Starting TJ = 150°C, ISCIS = 31.1A, L = 650 µHy Collector Current Continuous, At TC = 25°C, See Fig 9 Collector Current Continuous, At TC = 110°C, See Fig 9 Gate to Emitter Voltage Continuous Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C Operating Junction Temperature Range Storage Junction Temperature Range Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) Max Lead Temp for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at 100p F, 1500Ω Ratings 480 24 500 315 51 43 ±10 300 2 -40 to 175 -40 to 175 300...