Fairchild Semiconductor J6806D
NPN Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature 50Ω typ. E Rating 1500 750 6 6 12 50 150 -55 ~ 150 Units V V V A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10%ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB=1A IF = 4.5A VCC=200V, IC=4A, RL=50Ω IB1=1.0A, IB2= - 2.0A 40 6 8 4 7 5 1.5 2 3...