Fairchild Semiconductor KSA910
PNP Epitaxial Silicon Transistor
| Part No. | KSA910 |
|---|---|
| Datasheet | KSA910 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
● Collector-Emitter Voltage : VCEO= -150V● Output Capacitance : Cob=5pF (MAX.)
● Complement to KSC2310 1 TO-92L 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -150 -150 -5 -50 800 150 -55 ~ 150 Units V V V mA mW °C °CELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -100µA, IE=0 IC= -5mA, IB=0 IE= -10µA, IC=0 VCB= -150V, IE=0 VCE= -5V, IC= -10mA IC= -10mA, IB= -1mA VCE= -30V, IC= -10mA VCB= -10V, IE=0, f=1MHz 100 5 40 Min. -150 -150 -5 -100 240 -0.8 V MHz pF Typ.
