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KSB1151 - PNP Epitaxial Silicon Transistor

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KSB1151 KSB1151 Feature • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation : PC=1.3W (Ta=25°C) • Complement to KSD 1691 1 TO-126 1. Emitter 2.Collector 3.