Fairchild Semiconductor KSB708
Low Frequency Power Amplifier
| Part No. | KSB708 |
|---|---|
| Datasheet | KSB708 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | Low Frequency Power Amplifier |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature : B707 : B708 Value - 80 - 60 - 80 - 7.0 - 7.0 - 15 - 3.5 40 1.5 150 - 55 ~ 150 Units V V V V A A A W W °C °C * PW≤300µs, Duty Cycle≤10%ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 3A VCE = - 1V, IC = - 5A IC = - 5A, IB = - 0.5A IC = - 5A, IB = - 0.5A 40 20 Typ. Max. - 10 - 10 200 - 0.5 - 1.5 V V Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Cassification Classification hFE1 R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 ©2000 Fairchild Semiconductor International Rev.
