KSC2001
General Purpose Applications
- High h FE and Low VCE (sat)
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 5 700 150 600 150 -55 ~ 150 Units V V V m A m A m W °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol VBE (on) ICBO IEBO h FE1 h FE2 VCE (sat) VBE (sat) Cob f T Parameter
- Base Emitter On Voltage Collector Cut-off Current Emitter Cut-off Current
- DC Current Gain
- Collector-Emitter Saturation Voltage
- Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Test Condition VCE=6V, IC=10m A VCB=30V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100m A VCE=1V, IC=700m A IC=700m A, IB=70m A IC=700m A, IB=70m A VCB=6V, IE=0, f=1MHz VCE=6V,...
