KSC2330A
KSC2330A is NPN Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor.
Color TV Chroma Output
- Collector-Base Voltage : VCBO=400V
- Current Gain Bandwidth Product : f T=50MHz (TYP.)
TO-92L
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 400 400 7 100 1 150 -55 ~ +150 Units V V V m A W °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO h FE VCE (sat) f T Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100µA, IE=0 IC=5m A, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VCE=10V, IC=20m A IC=10m A, IB=1m A VCE=30V, IC=10m A VCB=10V, IE=0, f=1MHz 50 4 40 Min. 400 400 7 0.1 80 0.5 V MHz p F Typ. Max. Units V V V µA h FE Classification
Classification h FE R 40 ~ 65 O 55 ~ 80
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Typical Characteristics
VCE = 10V
IC[m A], COLLECTOR CURRENT
IB = 100µA IB = 80µA h FE, DC CURRENT GAIN
IB = 120µA
IB = 60µA IB = 40µA
IB = 20µA
0 0 20 40 60 80 100 120
1 1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[m A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC = 10 IB f = 1MHz IE = 0
Cob[p F],...