The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
KSC3233
KSC3233
High Speed Switching
• • • • Low Collector-Emitter Saturation Voltage High speed Switching : tF=1µs (Max.) @ IC=0.8A Collector-Emitter Voltage : VCEO=400V Lead formed for Surface Mount Applications (D-PAK, “ -D “ Suffix)
1
I-PAK
1. Base 2. Collector 3. Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 500 400 7 2 0.
KSC3233 Datasheet
