Fairchild Semiconductor KSC5026
NPN Epitaxial Silicon Transistor
| Part No. | KSC5026 |
|---|---|
| Datasheet | KSC5026 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1100 800 7 1.5 5 0.8 40 Units V V V A A A W °C °C DataShee DataSheet4U.com 150 - 55 ~ 150ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO VCEX(sus) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 0.75A IB1 = -IB2 = 0.15A L = 5mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A IC = 0.75A, IB = 0.15A IC = 0.75A, IB = 0.15A VCB =10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.1A VCC = 400V IC = 5IB1 = -2.5IB2 = 1A RL = 400Ω 35 15 0.5 3 0.3 10 8 Min.
