KSD227
Low Frequency Power Amplifier
- plement to KSA642
- Collector Power Dissipation : PC=400m W
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 25 5 300 400 150 -55 ~ 150 Units V V V m A m W °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=100µA, IE=0 IC=10m A, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50m A IC=300m A, IB=30m A 70 0.14 Min. 30 25 5 0.1 0.1 400 0.4 V Typ. Max. Units...
