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KSD471A - NPN Epitaxial Silicon Transistor

Key Features

  • Audio Frequency Power Amplifier.
  • Complement to KSB564A.
  • Collector Current: IC = 1 A.
  • Collector Power Dissipation: PC = 800 mW.
  • Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to the.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KSD471A — NPN Epitaxial Silicon Transistor March 2013 KSD471A NPN Epitaxial Silicon Transistor Features • Audio Frequency Power Amplifier • Complement to KSB564A • Collector Current: IC = 1 A • Collector Power Dissipation: PC = 800 mW • Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.