KSE701 - PNP Epitaxial Silicon Darlington Transistor

Fairchild Semiconductor

Datasheet Details

Part number	KSE701
Manufacturer	Fairchild Semiconductor
File Size	52.12 KB
Description	PNP Epitaxial Silicon Darlington Transistor
Datasheet	KSE701 Datasheet
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KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage : KSE700/701 : KSE702/703 Value - 60 - 80 - 60 - 80 -5 -4 - 0.1 40 150 - 55 ~ 150 Unit s V V V V V A A W °C °C R1 R2 E Equivalent Circuit C B Collector-Emitter Voltage : KSE700/701 : KSE702/703 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature R 1 ≅ 10 k Ω R 2 ≅ 0.

Published: Apr 5, 2005 |