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KSE801 - NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

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Datasheet Details

Part number KSE801
Manufacturer Fairchild Semiconductor
File Size 73.14 KB
Description NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
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KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • Complement to KSE700/701/702/703 TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO 60 80 VCEO 60 80 5 4 0.1 40 150 -55 ~ 150 V V V A A W °C °C V V Rating Unit VEBO IC IB PC TJ T STG 1. Emitter 2. Collector 3.
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