KSP06 Datasheet | Fairchild Semiconductor

KSP05/06 KSP05/06 Amplifier Transistor - Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V - Collector Dissipation: PC (max)=625m W - plement to KSP55/56 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KSP05 : KSP06 VCEO Collector-Emitter Voltage : KSP05 : KSP06 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 60 80 4 500 625 150 -55~150 V V V m A m W °C °C 60 80 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : KSP05 : KSP06 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP05 : KSP06 ICEO h FE VCE (sat) VBE (on) f T Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCB=60V, IE=0 VCB=80V, IE=0 VCE=60V, IB=0 VCE=1V, IC=10m A VCE=1V, IC=100m A IC=100m A, IB=10m A VCE=1V, IC=100m A VCE=2V, IC=10m A f=100MHz 100 50 50 0.25 1.2 V V MHz 0.1 0.1 0.1 µA µA µA Test Condition IC=1m A, IB=0 Min. 60 80 IE=100µA, IC=0 4 Max. Units V V V BVEBO ICBO - Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP05/06 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = 1V IC = 10 IB h FE, DC CURRENT GAIN V BE(sat) VCE(sat) 10 1 10 100 1000 0.01 1 10 100 1000 IC[m A], COLLECTOR CURRENT IC[m A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage f T[MHz], CURRENT GAIN-BANDWIDTH PRODUCT VCE = 1V VCE =...