Fairchild Semiconductor KSP06
Amplifier Transistor
| Part No. | KSP06 |
|---|---|
| Datasheet | KSP06 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | Amplifier Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KSP05 : KSP06 VCEO Collector-Emitter Voltage : KSP05 : KSP06 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 60 80 4 500 625 150 -55~150 V V V mA mW °C °C 60 80 V V Value UnitsELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : KSP05 : KSP06 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP05 : KSP06 ICEO hFE VCE (sat) VBE (on) fT Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCB=60V, IE=0 VCB=80V, IE=0 VCE=60V, IB=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA f=100MHz 100 50 50 0.25 1.2 V V MHz 0.1 0.1 0.1 µA µA µA Test Condition IC=1mA, IB=0 Min. 60 80 IE=100µA, IC=0 4 Max. Units V V V BVEBO ICBO * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev.
