KSP10 Datasheet | Fairchild Semiconductor

VHF/UHF transistor TO-92 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO PC PC TJ TSTG Rth(j-c) Rth(j-a) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation (Ta=25°C) Derate above 25°C Collector Power Dissipation (TC=25°C) Derate above 25°C Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 30 25 3.0 350 2.8 1.0 8.0 150 -55~150 125 357 Units V V V m W m W/°C W W/°C °C °C °C/W °C/W Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE VCE (sat) VBE (on) f T Cob Crb Cc- rbb´ Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Collector Base Feedback Capacitance Collector Base Time Constant Test Condition IC=100µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=2V, IC=0 VCE=10V, IC=4m A IC=4m A, IB=0.4m A VCE=10V, IC=4m A VCE=10V, IC=4m A, f=100MHz VCB=10V, IE=0, f=1MHz VCB=10V, IE=0, f=1MHz VCB=10V, IC=4m A, f=31.8MHz 0.35 650 0.7 0.65 9.0 60 0.5 0.95 V V MHz p F p F ps Min. 30 25 3.0 100 100 Max. Units V V V n A n A - Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = 10V IC = 10 IB h FE, DC CURRENT GAIN VBE(sat) V CE(sat) 1 1 10 100 1000 10 0.1 IC[m A], COLLECTOR CURRENT IC[m A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage f T[MHz], CURRENT GAIN-BANDWIDTH PRODUCT VCE = 10V...