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Fairchild Semiconductor
KSP45
KSP44/45 KSP44/45 High Voltage Transistor - Collector-Emitter Voltage: VCEO=KSP44: 400V KSP45: 350V - Collector Power Dissipation: PC (max)=625m W TO-92 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSP44 : KSP45 VCEO Collector-Emitter Voltage : KSP44 : KSP45 VEBO IC PC PC TJ Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25°C) Collector Power Dissipation (TC=25°C) Junction Temperature 1. Emitter 2. Base 3. Collector Value 500 400 400 350 6 300 625 1.5 150 Units V V V V V m A m W W °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP44 : KSP45 - Collector -Emitter Breakdown Voltage : KSP44 : KSP45 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP44 : KSP45 ICES Collector Cut-off Current : KSP44 : KSP45 IEBO h FE Emitter Cut-off Current - DC...