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KST5401
KST5401
High Voltage Transistor
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value -160 -150 -5 -500 350 150 Units V V V mA mW °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC= -100µA, IE=0 IC= -1.0mA, IB=0 IE= -10µA, IC=0 VCB= -100V, IE=0 VCE= -5V, IC= -1.
KST5401 Datasheet
