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KST5550
KST5550
High Voltage Transistor
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value 160 140 6 600 350 150 Units V V V mA mW °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=100V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1.
KST5550 Datasheet
