L14G2 Datasheet | Fairchild Semiconductor

DESCRIPTION The L14G1/L14G2/L14G3 are silicon phototransistors mounted in a narrow angle, TO-18 package. FEATURES - Hermetically sealed package - Narrow reception angle  2001 Fairchild Semiconductor Corporation DS300307 6/01/01 1 OF 4 .fairchildsemi. HERMETIC SILICON PHOTOTRANSISTOR L14G1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD L14G3 Unit °C °C °C °C V V V m W m W Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 45 45 5 300 600 NOTE: 1. Derate power dissipation linearly 3.00 m W/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 m W/°C above 25°C case. 3. RMA flux is remended. 4. Methanol or isopropyl alcohols are remended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a Ga As LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A Ga As source of 3.0 m W/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 10 m W/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER (TA =25°C) (All measurements made under pulse conditions) SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14G1 On-State Collector Current L14G2 On-State Collector Current L14G3 Turn-On Time Turn-Off Time Saturation Voltage IC = 10 m A, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 10 V, Ee = 0 Ee = 0.5 m W/cm2, VCE = 5...