Fairchild Semiconductor L14N2
The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package.| Part No. | L14N2 |
|---|---|
| Datasheet | L14N2 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | HERMETIC SILICON PHOTOTRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Hermetically sealed package● Wide reception angle
● Device can be used as a photodiode by using the collector and base leads. 2001 Fairchild Semiconductor Corporation DS300308 6/01/01 1 OF 4 HERMETIC SILICON PHOTOTRANSISTOR L14N1
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 30 40 5 300 600 L14N2 Unit °C °C °C °C V V V mW mW NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents.
