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LED56 - GaAs INFRARED EMITTING DIODE

General Description

The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package.

Key Features

  • Good optical to mechanical alignment.
  • Mechanically and wavelength matched to the TO-18 series phototransistor.
  • Hermetically sealed package.
  • High irradiance level  2001 Fairchild Semiconductor Corporation DS300312 6/05/01 1 OF 4 www. fairchildsemi. com GaAs.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
LED55B GaAs INFRARED EMITTING DIODE
LED55BF GaAs INFRARED EMITTING DIODE
LED55C GaAs INFRARED EMITTING DIODE
LED55CF LED56F GaAs INFRARED EMITTING DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs INFRARED EMITTING DIODE LED55B PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) LED55C LED56 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 0.040 (1.02) 0.040 (1.02) 45° Ø0.020 (0.51) 2X 3 ANODE (Connected To Case) CATHODE 3 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 DESCRIPTION The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package. FEATURES • Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level  2001 Fairchild Semiconductor Corporation DS300312 6/05/01 1 OF 4 www.fairchildsemi.