Fairchild Semiconductor MJE13006
NPN Silicon Transistor
| Part No. | MJE13006 |
|---|---|
| Datasheet | MJE13006 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : MJE13006 : MJE13007 : MJE13006 : MJE13007 Value 600 700 300 400 9 8 16 4 80 150 - 65 ~ 150 Units V V V V V A A A W °C °CELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector- Emitter Breakdown Voltage : MJE13006 : MJE13007 Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω 4 1.6 3 0.7 110 8 5 Min. 300 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ.
