MMBT3904K
MMBT3904K NPN Epitaxial Silicon Transistor
February 2005
NPN Epitaxial Silicon Transistor General Purpose Transistor
Marking
2 1
1AK
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Ta = 25°C unless otherwise noted
Parameter
Value
60 40 6 200 350 150
Units
V V V m A m W °C
Collector Power Dissipation Storage Temperature
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICEX h FE
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
- Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain
- Test Condition
IC = 10µA, IE = 0 IC = 1m A, IB = 0 IE = 10µA, IC = 0 VCE = 30V, VEB = 3V VCE = 1V, IC = 0.1m A VCE = 1V, IC = 1m A VCE = 1V, IC = 10m A VCE = 1V, IC = 50m A VCE = 1V, IC = 100m A IC = 10m A, IB = 1m A IC = 50m A, IB = 5m A IC = 10m A, IB = 1m A IC = 50m A, IB =...
