MOC207-M Description
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through - the - board mounting. MOC206-M MOC207-M MOC208-M.
MOC207-M Key Features
- U.L. Recognized (File #E90700, Volume 2)
- VDE Recognized (File #136616) (add option "V" for VDE approval, i.e, MOC205V-M)
- Closely Matched Current Transfer Ratios
- Convenient Plastic SOIC-8 Surface Mountable Package Style
- Minimum BVCEO of 70 Volts Guaranteed
- Standard SOIC-8 Footprint, with 0.050" Lead Spacing
- patible with Dual Wave, Vapor Phase and IR Reflow Soldering
- High Input-Output Isolation of 2500 VAC(rms) Guaranteed