MOC70P
DESCRIPTION
The MOC70PX consists of an infrared light emitting diode coupled to an NPN silicon phototransistor packaged into an injection molded housing. The housing is designed for wide gap, non contact sensing.
0.250 [6.35]
0.506 [12.85] 0.200 [5.08] NOM 0.153 [3.89] 2X C L 0.080 [2.03] NOM
FEATURES
0.270 [6.86]
- No contact sensing
- 5 mm gap
SCHEMATIC
1 4
0.050 [1.27] 0.140 [3.56] 0.105 [2.67] 0.380 [9.65] PIN 2 CATHODE PIN 3 (COLLECTOR) SEATING PLANE 0.020 [0.51] 4 X
- .040” aperture
- Low profile
- PCB mount
- Transistor output
0.100 [2.54]
NOTES
PIN 1 (ANODE) PIN 4 (EMITTER)
NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
1. Derate power dissipation linearly, on each ponent, 1.67 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Soldering iron tip 1/16” (1.6mm) from housing. 5. As long as leads...
