MOC8106M
Features
- UL recognized (File # E90700, Vol. 2)
- VDE recognized
Description
The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.
- -
- -
- Add option V (e.g., CNY17F2VM)
- File #102497 Current transfer ratio in select groups High BVCEO: 70V minimum (CNY17XM, CNY17FXM, MOC810XM) Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation. Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FXM, MOC810XM)
Package Outlines
Applications
- Power supply regulators
- Digital logic inputs
- Microprocessor inputs
- Appliance sensor systems
- Industrial controls
Schematics
ANODE 1
6 NC
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
CATHODE 2
5 COLLECTOR
NC 3
4 EMITTER
NC 3
4 EMITTER
CNY17F1M/2M/3M/4M MOC8106M/7M
CNY171M/2M/3M/4M
©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
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