MOC8204M Description
The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
MOC8204M Key Features
- High voltage
- MOC8204M, BVCER = 400V
- H11D1M, H11D2M, BVCER = 300V
- H11D3M, BVCER = 200V
- High isolation voltage
- 7500 VAC peak, 1 second
- Underwriters Laboratory (UL) recognized File # E90700, Volume 2