MOC8204M
Features
- High voltage: tm
General Description
The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
- MOC8204M, BVCER = 400V
- H11D1M, H11D2M, BVCER = 300V
- H11D3M, BVCER = 200V ..
- High isolation voltage:
- 7500 VAC peak, 1 second
- Underwriters Laboratory (UL) recognized File # E90700, Volume 2
Applications
- Power supply regulators
- Digital logic inputs
- Microprocessor inputs
- Appliance sensor systems
- Industrial controls
Schematic
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
.fairchildsemi.
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device....
