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MOCD223-M - DUAL CHANNEL PHOTOTRANSISTOR

General Description

The MOCD223-M consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline plastic package.

Key Features

  • U. L. Recognized (File #E90700, Volume 2).
  • VDE Recognized (File #13616) (add option “V” for VDE approval, i. e, MOCD223V-M).
  • Convenient Plastic SOIC-8 Surface Mountable Package Style.
  • High Current Transfer Ratio of 500% Minimum at IF = 1 mA.
  • Minimum BVCEO of 30 Volts Guaranteed.
  • Standard SOIC-8 Footprint, with 0.050" Lead Spacing.
  • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering.
  • High Input-Output Isolation Volta.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOCD223-M DESCRIPTION The MOCD223-M consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications that require low input current and eliminates the need for through-the-board mounting. FEATURES • U.L. Recognized (File #E90700, Volume 2) • VDE Recognized (File #13616) (add option “V” for VDE approval, i.e, MOCD223V-M) • Convenient Plastic SOIC-8 Surface Mountable Package Style • High Current Transfer Ratio of 500% Minimum at IF = 1 mA • Minimum BVCEO of 30 Volts Guaranteed • Standard SOIC-8 Footprint, with 0.