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MPF102
MPF102
N-Channel RF Amplifier
• This device is designed for electronic switching applications such as low ON resistance analog switching.
• Sourced from process 50.
1 TO-92 1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Value 25 -25 10
- 55 ~ +155
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits.
MPF102 Datasheet
